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- Title
Thick-film electrochemical growth of Al-doped zinc oxide.
- Authors
Stoeber, Boris; Sielmann, Christoph; Walus, Konrad; Siller, Valerie
- Abstract
$$45\,\pm \,5\,{\mathrm {\upmu m}}$$ -thick Al:ZnO films were galvanostatically grown. The propensity for $${\mathrm{Al}}^{3+}$$ to both be absorbed into the ZnO film as well as react with $${\mathrm{OH}}^-$$ in the growth solution required developing a method to continuously introduce new dopant to the growth solution to maintain dopant levels throughout the deposition. Film thickness, transparency, morphology, aluminium content, crystallinity, and electrical resistivity as a function of approximate $${\mathrm{Al}}({\mathrm{NO}}_3)_3$$ dopant concentration was examined. Limits in dopant concentration during growth were determined, with concentrations exceeding $$10\,{\mathrm {\upmu mol\,L^{-1}}}$$ causing layers of aluminium hydroxide to deposit on the film. Low-temperature annealing was performed to encourage thermal decomposition of any remaining $${\mathrm{Zn}}({\mathrm{OH}})_2$$ in the film, and the resulting effects on film opacity, morphology, and resistivity were described. A transparent film consisting of 1.72% molar concentration of aluminium was produced with a through-film resistivity of $$400\pm 100\,{\mathrm {\Omega \,cm}}$$ , $$25{\times}$$ less than the undoped film. Graphical Abstract:
- Publication
Journal of Applied Electrochemistry, 2017, Vol 47, Issue 1, p85
- ISSN
0021-891X
- Publication type
Academic Journal
- DOI
10.1007/s10800-016-1019-0