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- Title
Features of the electroluminescence spectra of quantum-confined silicon p- n heterojunctions in the infrared spectral region.
- Authors
Bagraev, N.; Klyachkin, L.; Kuzmin, R.; Malyarenko, A.; Mashkov, V.
- Abstract
The results of studying the characteristics of optical emission in various regions of quantum-confined silicon p- n heterojunctions heavily doped with boron are analyzed. The results obtained allow one to conclude that near-infrared electroluminescence arises near the heterointerface between the nanostructured wide-gap silicon p-barrier heavily doped with boron and n-type silicon (100), the formation of which included the active involvement of boron dipole centers.
- Publication
Semiconductors, 2013, Vol 47, Issue 11, p1517
- ISSN
1063-7826
- Publication type
Academic Journal
- DOI
10.1134/S1063782613110067