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- Title
An 8T SRAM Cell with Improved I<sub>ON</sub>/I<sub>OFF</sub> Ratio and with Faster Read Speed.
- Authors
GOSWAMI, ABHINANDAN; RAJPUT, AMIT SINGH; SXENA, NIKHIL
- Abstract
Fast speed of read operation and stability is the general need of memory device, SRAM read stability can be achieved by keeping high ION/IOFF ratio. In this paper we propose a 8T SRAM Cell that results in reduction of Read delay and increase the ION/IOFF ratio at the same time in comparison with conventional 6T SRAM Cell and 7T SRAM Cell at the cost of leakage power. This paper is aimed to increase ION/IOFF ratio while keeping the faster Read speed.
- Publication
Journal of Active & Passive Electronic Devices, 2020, Vol 15, Issue 1/2, p127
- ISSN
1555-0281
- Publication type
Academic Journal